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RJK5002DJE - 500V - 2.4A - MOS FET High Speed Power Switching

RJK5002DJE_7967833.PDF Datasheet


 Full text search : 500V - 2.4A - MOS FET High Speed Power Switching


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APT5010JN APT5012JN APT5012 POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET
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APT5020BN APT5022BN POWER MOS IV 500V 28.0A 0.20 Ohm / 500V 27.0A 0.22 Ohm
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APT50M50JVFR POWER MOS V 500V 77A 0.050 Ohm
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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APT5027 APT5027BVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
POWER MOS V 500V 20A 0.270 Ohm
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APT5010JVFR POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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APT5022AVR POWER MOS V 500V 21A 0.220 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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APT5024BVR POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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APT5019HVR POWER MOS V 500V 24A 0.190 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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APT50M50JVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
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